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NewsPoster Dec 30, 2013 06:57 AM
Samsung unveils LPDDR4 RAM chip, hints at 4GB RAM in smartphones
Samsung has revealed its first 8 gigabit (1GB) low-power DDR4 (LPDDR4) mobile DRAM, something Samsung believes to be the largest density available for DRAM components today. Built using a 20-nanometer process, the single-layer chip could lead to the company offering smartphones and mobile devices with 4GB of RAM in the future, eclipsing current models such as the <a href=" xel.density.of.previous.model/" rel='nofollow'>Galaxy Tab 10.1 2014</a> which currently use 3GB of RAM. <br />
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The new chip could be stacked inside a four-layer module, allowing it to offer 4GB of storage, <a href="" rel='nofollow'>suggests</a> <em>Samsung Tomorrow</em>. The module is said to provide 50-percent higher performance compared to LPDDR3 or DDR3 memory, while consuming 40-percent less energy at 1.1 volts. Using a Low Voltage Swing Terminated Logic (LVSTL) interface, it is capable of a transfer rate per pin of 3,200 Mbps, double that of 20nm LPDDR3 DRAM currently being produced. <br />
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Aside from large-screen UHD smartphones and tablets, Samsung is looking to employ the chip in upcoming ultra-slim notebooks, though it is unclear how far into 2014 it will be until the first products using the memory gets unveiled.
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